Metamaterial comprising a plurality of resonators disposed on a substrate, the substrate comprising a dielectric support layer and a relatively thin semiconductor layer, having a Schottky junction between at least one conducting resonator and the semiconductor layer. The properties of the resonator may be adjusted by modifying the physical extent of a depletion region associated with the Schottky junction.
US Patent No.: 8,130,031
David R. Smith, Ph.D.
James B. Duke Professor of Electrical and Computer Engineering